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| IRFM MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) D IA 1 .2 7 (.0 5 0 ) 1 .0 2 (.0 4 0 ) 6 .6 0 (.2 6 0 ) 6 .3 2 (.2 4 9 ) 1 3 .8 4 (.5 4 5 ) 1 3 .5 9 (.5 3 5 ) 6 .9 1 (.2 7 2 ) 6 .8 1 (.2 6 8 ) 200V 27.4A W 0.100W 3 .7 8 (.1 4 9 ) 3 .5 3 (.1 3 9 ) 2 0 .3 2 (.8 0 0 ) 2 0 .0 6 (.7 9 0 ) 1 3 .8 4 (.5 4 5 ) 1 3 .5 9 (.5 3 5 ) 1 7 .4 0 (.6 8 5 ) 1 6 .8 9 (.6 6 5 ) FEATURES * N-CHANNEL MOSFET * HIGH VOLTAGE * INTEGRAL PROTECTION DIODE R 1 .0 1 (.0 4 0 ) M IN G a te S o u rc e D r a in 1 .1 4 (.0 4 5 ) 0 .8 9 (0 .3 5 ) D ia T y p 3 Leads 4 .9 5 (.1 9 5 ) 4 .1 9 (.1 6 5 ) 3 .8 1 (.1 5 0 ) B S C 9 .5 2 (.3 7 5 ) 8 .7 6 (.3 4 5 ) * HERMETIC ISOLATED TO-254 PAC 3 .8 1 (.1 5 0 ) B S C * CERAMIC SURFACE MOUNT PACK OPTION TO-254 Metal Package Pin 1 - Drain Pin 2 - Source Pin 3 - Gate ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VGS ID IDM PD IL dv / dt RqJC RqJA RqCS TJ , TSTG TL Gate - Source Voltage Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Avalanche Current , Clamped 1 Peak Diode Recovery 2 Thermal Resistance Junction - Case Thermal Resistance Junction - Ambient Thermal Resistance Case - Sink Operating Junction and Storage Temperature Range Lead Temperature (1.6mm from case for 10s) @ TC = 25C @ VGS = 10V , TC = 25C @ VGS = 10V , TC = 100C 20V 27.4A 17A 110A 150W 1.2W / C 27.4A 5.5V / ns 0.83C / W 48C / W 0.21C / W typ. -55 to 150C 300C IRFM ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Test Conditions VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS 2 Min. 200 Typ. Max ID = 1mA DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain - Source On-State Resistance 2 Reference to 25C ID = 17A ID = 27.4A ID = 250mA IDS = 27.4A VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V 2 9 0.28 0.100 4 25 250 100 0.105 VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss CDC Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Forward Transconductance VDS 15V VGS = 0 Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain - Case Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn- On Delay Time Rise Time Turn-Off Delay Time Fall Time -100 3500 700 110 12 55 8 30 115 22 60 35 190 170 130 27.4 110 TJ = 25C TJ = 25C Negligible 8.7 8.7 VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 27.4A VDS = 0.5BVDSS VDD = 100V ID = 27.4A RG = 2.35W SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 1 Diode Forward Voltage 2 Reverse Recovery Time 2 Reverse Recovery Charge Forward Turn-On Time 2 IS = 27.4A VGS = 0 IF = 27.4A 1.9 950 9.0 di / dt 100A/ms VDD 50V PACKAGE CHARACTERISTICS Internal Drain Inductance Measured from 6mm down drain lead to centre of die Internal Source Inductance Measured from 6mm down source lead to source bond pad |
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